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| 2SK1934 Silicon N Channel MOS FET Application High speed power switching TO-3P Features * * * * Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator 1 2 1 2 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 1000 30 8 24 8 150 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK1934 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1000 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 800 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V * ID = 4 A VDS = 20 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 1.2 10 250 3.0 1.6 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 4 6 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 2690 920 375 35 135 300 205 0.9 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 1600 -- s -------------------------------------------------------------------------------------- 2SK1934 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Drain Current I D (A) Maximum Safe Operation Area ea 50 30 10 3 1 0.3 0.1 O is pe lim ra ite tion d in by t R his 10 ar s (o n) 10 DS 0 PW s 100 1 m c= (T 10 n = tio ra pe O s m DC s (1 sh ot 50 ) ) C 25 Ta = 25C 0 50 100 150 0.05 1 Case Temperature Tc (C) 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 10 V 8 8V Pulse Test 8 10 Typical Transfer Characteristics Drain Current I D (A) 5V 6 4 4V 2 VGS = 3.5 V 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Drain Current I D (A) Pulse Test VDS = 20 V 6 4 2 Tc = 25C 75C -25C 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 2SK1934 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 50 1.0 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 0.8 0.6 0.4 5A Static Drain to Source on State Resistance R DS(on) ( ) 20 10 5 2 Pulse Test 2A 0.2 VGS = 10 V 1 0.5 0.2 0.5 1 2 5 Drain Current I D (A) 10 20 ID= 1 A 4 8 12 16 20 Gate to Source Voltage VGS (V) 0 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current 50 5 Static Drain to Source on State Resistance R DS (on) ( ) 4 3 2 1 0 -40 Pulse Test VGS = 10 V Forward Transfer Admittance |yfs | (S) 20 10 Pulse Test VDS = 20 V Tc = 25C ID = 5 A 2A 1A 5 -25C 2 1 0.2 0.5 1 Drain Current 2 75C 0 40 80 120 160 Case Temperature TC (C) 0.5 0.1 5 10 I D (A) 2SK1934 Body to Drain Diode Reverse Recovery Time 5000 Typical Capacitance vs. Drain to Source Voltage 10000 Reverse Recovery Time t rr (ns) 2000 1000 500 200 100 di/dt = 100 A/ s, VGS = 0 Ta = 25C Ciss Capacitance C (pF) 1000 Coss Crss 100 VGS = 0 V f = 1 MHz 50 0.2 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1000 Drain to Source Voltage VDS (V) 800 600 400 200 VDD = 250 V 400 V 600 V VDS ID = 8 A VGS 20 Gate to Source Voltage VGS (V) 16 12 8 4 0 200 Switching Characteristics 500 200 100 50 20 10 5 0.1 VGS = 10 V, VDD = .30 V : PW = 5 s, duty >1% = td(off) tf tr td(on) VDD = 250 V 400 V 600 V 0 40 80 120 160 Gate Charge Qg (nc) Switching Time t (ns) 0.2 0.5 1 Drain Current 2 5 I D (A) 10 |
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